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Ge wafer supply
Update Time : 2016-08-24 View : 816

                 

Can be customized according to customer requirements, various sizes of semiconductor, solar and optical grade germanium.
Product size in addition to the standard 3 "2" 4 "6", but also in accordance with customer requirements processing custom specifications of various sizes.
Size: 2 "3" 4 "6" on customer'requirements or
Crystal to (100) (111) (110) or by customer requirements.
Direction: (100) (111) (110) on customer'requirements or
Product type n-type / p-type / Undope
N-type Type: / p-type / Undope
Surface: grinding, single throw, double throw
Lapping single, side polished Double, side polished Surface:
Thickness: 150um~20mm
150um ~20mm Thickness:

 

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典范规格见下表

Semi-conducting Ge Specifications


Growth Method VGF
Dopant n-type: As;   p-type: Ga
Wafer Shape Round (DIA: 2" 4" 6")
Surface Orientation** (100)±0.5°

**Other Orientations maybe available upon request


Dopant As (n-type) Ga (p-type)
Resistivity  (Ω.cm) 0.05-0.25 0.005-0.04
Etch Pitch Density (cm2) ≤ 300 ≤ 300

 


Wafer Diameter (mm) 50.8±0.3 100±0.3
Thickness (µm) 175±25 175±25
TTV [P/P] (µm) ≤ 15 ≤ 15
WARP (µm) ≤ 25 ≤ 25
IF* (mm) 17±1 32.5±1
OF (mm) 7±1 18±1
Polish** E/E, P/E, P/G E/E, P/E, P/G
Backside Ra (µm)*** < 0.1 < 0.1

 

 

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